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High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers
We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulati...
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Published in: | IEEE photonics technology letters 1994-06, Vol.6 (6), p.687-689 |
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creator | Siala, S. Hanmin Zhao Govindarajan, M. Nottenburg, R.N. Dapkus, P.D. |
description | We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.< > |
doi_str_mv | 10.1109/68.300163 |
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The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. 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We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.< ></description><subject>Anodes</subject><subject>Digital modulation</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gallium arsenide</subject><subject>High speed optical techniques</subject><subject>Indium gallium arsenide</subject><subject>Lasers</subject><subject>Optical devices</subject><subject>Optical modulation</subject><subject>Optics</subject><subject>Physics</subject><subject>Power semiconductor switches</subject><subject>Semiconductor lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Temperature</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNkDFPwzAQRiMEEqUwsDJlQEgMae3YTu2xQlCQKrHAHF2Tc2vkJsWXCvHvcZQKJMTAcne6e_eGL0kuOZtwzsy00BPBGC_EUTLiRvKM8Zk8jjOLM-dCnSZnRG8RkUrIUWIf3XqT0Q6xTj2ENWbk1g34tHZr18W-beu9h861TdratNsExKzDsHU95NuPrF_RpvV1Sl0A10TRU7OAOU37EqWEgc6TEwue8OLQx8nrw_3L3WO2fF483c2XWZWrvMuMAokFzsxKrLhEaQTmhUUouNErwFpbYIYp1JrJmYVCMw5S1cbMUFe2UmKc3AzeXWjf90hduXVUoffQYLunMtdGGaHYP0AhtCzyCN4OYBVaooC23AW3hfBZclb2kZeFLofII3t9kAJV4G2ApnL0_SCElEz22PSXsopR9xH3Afo_xVfDh0PEH99w_AKwW5hS</recordid><startdate>19940601</startdate><enddate>19940601</enddate><creator>Siala, S.</creator><creator>Hanmin Zhao</creator><creator>Govindarajan, M.</creator><creator>Nottenburg, R.N.</creator><creator>Dapkus, P.D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19940601</creationdate><title>High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers</title><author>Siala, S. ; Hanmin Zhao ; Govindarajan, M. ; Nottenburg, R.N. ; Dapkus, P.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Anodes</topic><topic>Digital modulation</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Gallium arsenide</topic><topic>High speed optical techniques</topic><topic>Indium gallium arsenide</topic><topic>Lasers</topic><topic>Optical devices</topic><topic>Optical modulation</topic><topic>Optics</topic><topic>Physics</topic><topic>Power semiconductor switches</topic><topic>Semiconductor lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Siala, S.</creatorcontrib><creatorcontrib>Hanmin Zhao</creatorcontrib><creatorcontrib>Govindarajan, M.</creatorcontrib><creatorcontrib>Nottenburg, R.N.</creatorcontrib><creatorcontrib>Dapkus, P.D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Siala, S.</au><au>Hanmin Zhao</au><au>Govindarajan, M.</au><au>Nottenburg, R.N.</au><au>Dapkus, P.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1994-06-01</date><risdate>1994</risdate><volume>6</volume><issue>6</issue><spage>687</spage><epage>689</epage><pages>687-689</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. 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ispartof | IEEE photonics technology letters, 1994-06, Vol.6 (6), p.687-689 |
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subjects | Anodes Digital modulation Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide High speed optical techniques Indium gallium arsenide Lasers Optical devices Optical modulation Optics Physics Power semiconductor switches Semiconductor lasers Semiconductor lasers laser diodes Temperature |
title | High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers |
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