Loading…

High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers

We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulati...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1994-06, Vol.6 (6), p.687-689
Main Authors: Siala, S., Hanmin Zhao, Govindarajan, M., Nottenburg, R.N., Dapkus, P.D.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53
cites cdi_FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53
container_end_page 689
container_issue 6
container_start_page 687
container_title IEEE photonics technology letters
container_volume 6
creator Siala, S.
Hanmin Zhao
Govindarajan, M.
Nottenburg, R.N.
Dapkus, P.D.
description We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.< >
doi_str_mv 10.1109/68.300163
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_citationtrail_10_1109_68_300163</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>300163</ieee_id><sourcerecordid>28959350</sourcerecordid><originalsourceid>FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53</originalsourceid><addsrcrecordid>eNqNkDFPwzAQRiMEEqUwsDJlQEgMae3YTu2xQlCQKrHAHF2Tc2vkJsWXCvHvcZQKJMTAcne6e_eGL0kuOZtwzsy00BPBGC_EUTLiRvKM8Zk8jjOLM-dCnSZnRG8RkUrIUWIf3XqT0Q6xTj2ENWbk1g34tHZr18W-beu9h861TdratNsExKzDsHU95NuPrF_RpvV1Sl0A10TRU7OAOU37EqWEgc6TEwue8OLQx8nrw_3L3WO2fF483c2XWZWrvMuMAokFzsxKrLhEaQTmhUUouNErwFpbYIYp1JrJmYVCMw5S1cbMUFe2UmKc3AzeXWjf90hduXVUoffQYLunMtdGGaHYP0AhtCzyCN4OYBVaooC23AW3hfBZclb2kZeFLofII3t9kAJV4G2ApnL0_SCElEz22PSXsopR9xH3Afo_xVfDh0PEH99w_AKwW5hS</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28338462</pqid></control><display><type>article</type><title>High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers</title><source>IEEE Xplore (Online service)</source><creator>Siala, S. ; Hanmin Zhao ; Govindarajan, M. ; Nottenburg, R.N. ; Dapkus, P.D.</creator><creatorcontrib>Siala, S. ; Hanmin Zhao ; Govindarajan, M. ; Nottenburg, R.N. ; Dapkus, P.D.</creatorcontrib><description>We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.&lt; &gt;</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.300163</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anodes ; Digital modulation ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gallium arsenide ; High speed optical techniques ; Indium gallium arsenide ; Lasers ; Optical devices ; Optical modulation ; Optics ; Physics ; Power semiconductor switches ; Semiconductor lasers ; Semiconductor lasers; laser diodes ; Temperature</subject><ispartof>IEEE photonics technology letters, 1994-06, Vol.6 (6), p.687-689</ispartof><rights>1995 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53</citedby><cites>FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/300163$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3344043$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Siala, S.</creatorcontrib><creatorcontrib>Hanmin Zhao</creatorcontrib><creatorcontrib>Govindarajan, M.</creatorcontrib><creatorcontrib>Nottenburg, R.N.</creatorcontrib><creatorcontrib>Dapkus, P.D.</creatorcontrib><title>High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.&lt; &gt;</description><subject>Anodes</subject><subject>Digital modulation</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gallium arsenide</subject><subject>High speed optical techniques</subject><subject>Indium gallium arsenide</subject><subject>Lasers</subject><subject>Optical devices</subject><subject>Optical modulation</subject><subject>Optics</subject><subject>Physics</subject><subject>Power semiconductor switches</subject><subject>Semiconductor lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Temperature</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNkDFPwzAQRiMEEqUwsDJlQEgMae3YTu2xQlCQKrHAHF2Tc2vkJsWXCvHvcZQKJMTAcne6e_eGL0kuOZtwzsy00BPBGC_EUTLiRvKM8Zk8jjOLM-dCnSZnRG8RkUrIUWIf3XqT0Q6xTj2ENWbk1g34tHZr18W-beu9h861TdratNsExKzDsHU95NuPrF_RpvV1Sl0A10TRU7OAOU37EqWEgc6TEwue8OLQx8nrw_3L3WO2fF483c2XWZWrvMuMAokFzsxKrLhEaQTmhUUouNErwFpbYIYp1JrJmYVCMw5S1cbMUFe2UmKc3AzeXWjf90hduXVUoffQYLunMtdGGaHYP0AhtCzyCN4OYBVaooC23AW3hfBZclb2kZeFLofII3t9kAJV4G2ApnL0_SCElEz22PSXsopR9xH3Afo_xVfDh0PEH99w_AKwW5hS</recordid><startdate>19940601</startdate><enddate>19940601</enddate><creator>Siala, S.</creator><creator>Hanmin Zhao</creator><creator>Govindarajan, M.</creator><creator>Nottenburg, R.N.</creator><creator>Dapkus, P.D.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19940601</creationdate><title>High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers</title><author>Siala, S. ; Hanmin Zhao ; Govindarajan, M. ; Nottenburg, R.N. ; Dapkus, P.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Anodes</topic><topic>Digital modulation</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Gallium arsenide</topic><topic>High speed optical techniques</topic><topic>Indium gallium arsenide</topic><topic>Lasers</topic><topic>Optical devices</topic><topic>Optical modulation</topic><topic>Optics</topic><topic>Physics</topic><topic>Power semiconductor switches</topic><topic>Semiconductor lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Siala, S.</creatorcontrib><creatorcontrib>Hanmin Zhao</creatorcontrib><creatorcontrib>Govindarajan, M.</creatorcontrib><creatorcontrib>Nottenburg, R.N.</creatorcontrib><creatorcontrib>Dapkus, P.D.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Siala, S.</au><au>Hanmin Zhao</au><au>Govindarajan, M.</au><au>Nottenburg, R.N.</au><au>Dapkus, P.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1994-06-01</date><risdate>1994</risdate><volume>6</volume><issue>6</issue><spage>687</spage><epage>689</epage><pages>687-689</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.&lt; &gt;</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/68.300163</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 1994-06, Vol.6 (6), p.687-689
issn 1041-1135
1941-0174
language eng
recordid cdi_crossref_citationtrail_10_1109_68_300163
source IEEE Xplore (Online service)
subjects Anodes
Digital modulation
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
High speed optical techniques
Indium gallium arsenide
Lasers
Optical devices
Optical modulation
Optics
Physics
Power semiconductor switches
Semiconductor lasers
Semiconductor lasers
laser diodes
Temperature
title High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T08%3A44%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-speed%20large-signal%20digital%20modulation%20of%20three-terminal%20low-threshold%20strained%20InGaAs/GaAs%20lasers&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Siala,%20S.&rft.date=1994-06-01&rft.volume=6&rft.issue=6&rft.spage=687&rft.epage=689&rft.pages=687-689&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.300163&rft_dat=%3Cproquest_cross%3E28959350%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c252t-95a4e6e79b3b14e493e26fea6198baed8fa0905e88047fa6801a45d997e8cfc53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28338462&rft_id=info:pmid/&rft_ieee_id=300163&rfr_iscdi=true