Controlled Polarizability of One-Nanometer-Thick Oxide Nanosheets for Tailored, High-κ Nanodielectrics

An important challenge in current microelectronics research is the development of techniques for making smaller, higher‐performance electronic components. In this context, the fabrication and integration of ultrathin high‐κ dielectrics with good insulating properties is an important issue. Here, we...

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Bibliographic Details
Published in:Advanced functional materials 2011-09, Vol.21 (18), p.3482-3487
Main Authors: Osada, Minoru, Takanashi, Genki, Li, Bao-Wen, Akatsuka, Kosho, Ebina, Yasuo, Ono, Kanta, Funakubo, Hiroshi, Takada, Kazunori, Sasaki, Takayoshi
Format: Article
Language:English
Subjects:
doping
high-κ dielectrics
layer-by-layer assembly
oxide nanosheets
site engineering
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Summary:An important challenge in current microelectronics research is the development of techniques for making smaller, higher‐performance electronic components. In this context, the fabrication and integration of ultrathin high‐κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high‐performance nanodielectrics using one‐nanometer‐thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site‐engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160–320), the largest value seen so far in high‐κ nanofilms with thickness down to 10 nm. Furthermore, these superior high‐κ properties are fairly temperature‐independent with low leakage‐current density (
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201100580