Defects: Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions (Adv. Funct. Mater. 11/2014)

Beneath the surface of a topological insulator is the bulk region (represented by its band structure), whose conductance should be kept minimal. New reproducible tools are needed which do not interfere with the surface states. Such non‐invasive measurements of the bulk electronic properties can be p...

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Bibliographic Details
Published in:Advanced functional materials 2014-03, Vol.24 (11), p.1648-1648
Main Authors: Koumoulis, Dimitrios, Leung, Belinda, Chasapis, Thomas C., Taylor, Robert, King Jr, Daniel, Kanatzidis, Mercouri G., Bouchard, Louis-S.
Format: Article
Language:English
Subjects:
chalcogenides
defects
NMR
spin-lattice relaxation
topological insulators
vacancies
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Summary:Beneath the surface of a topological insulator is the bulk region (represented by its band structure), whose conductance should be kept minimal. New reproducible tools are needed which do not interfere with the surface states. Such non‐invasive measurements of the bulk electronic properties can be provided by NMR spectroscopy, as shown by L.‐S. Bouchard and co‐workers on page 1519, which probes the resonant coupling of nuclear spins to the electrons near the Fermi level. Cover credit goes to Charlotte Gomez.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201470073