Memory Devices: Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices (Adv. Funct. Mater. 25/2015)

Resistive switching (RS) devices with configurable functionality based on silk protein are demonstrated by T. Wu, X. Chen, and co‐workers on page 3825. The types of RS can be effectively and exactly controlled between memory and threshold. The results suggest that silk protein has great potential in...

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Bibliographic Details
Published in:Advanced functional materials 2015-07, Vol.25 (25), p.3980-3980
Main Authors: Wang, Hong, Du, Yuanmin, Li, Yingtao, Zhu, Bowen, Leow, Wan Ru, Li, Yuangang, Pan, Jisheng, Wu, Tao, Chen, Xiaodong
Format: Article
Language:English
Subjects:
electronic devices
memory
proteins
resistive switching
threshold
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Summary:Resistive switching (RS) devices with configurable functionality based on silk protein are demonstrated by T. Wu, X. Chen, and co‐workers on page 3825. The types of RS can be effectively and exactly controlled between memory and threshold. The results suggest that silk protein has great potential in cross‐bar array applications for biocompatible and environmentally friendly high density data storage.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201570172