Phototransistors with Negative or Ambipolar Photoresponse Based on As‐Grown Heterostructures of Single‐Walled Carbon Nanotube and MoS 2

A facile synthesis method for the heterostructures of single‐walled carbon nanotubes (SWCNTs) and few‐layer MoS 2 is reported. The heterostructures are realized by in situ chemical vapor deposition of MoS 2 on individual SWCNTs. Field effect transistors based on the heterostructures display differen...

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Bibliographic Details
Published in:Advanced functional materials 2018-10, Vol.28 (40)
Main Authors: Nguyen, Van Tu, Yim, Woongbin, Park, Sae June, Son, Byung Hee, Kim, Young Chul, Cao, Thi Thanh, Sim, Yumin, Moon, Yoon‐Jong, Nguyen, Van Chuc, Seong, Maeng‐Je, Kim, Sun‐Kyung, Ahn, Yeong Hwan, Lee, Soonil, Park, Ji‐Yong
Format: Article
Language:English
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Summary:A facile synthesis method for the heterostructures of single‐walled carbon nanotubes (SWCNTs) and few‐layer MoS 2 is reported. The heterostructures are realized by in situ chemical vapor deposition of MoS 2 on individual SWCNTs. Field effect transistors based on the heterostructures display different transfer characteristics depending on the formation of MoS 2 conduction channels along SWCNTs. Under light illumination, negative photoresponse originating from charge transfer from MoS 2 to SWCNT is observed while positive photoresponse is observed in MoS 2 conduction channels, leading to ambipolar photoresponse in devices with both SWCNT and MoS 2 channels. The heterostructure phototransistor, for negative photoresponse, exhibits high responsivity (100–1000 AW −1 ) at low bias voltages (0.1 V) in the visible spectrum (500–700 nm) by combining high mobility conduction channel (SWCNT) with efficient light absorber (MoS 2 ).
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201802572