Noble Metal Dichalcogenides: A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors (Adv. Funct. Mater. 5/2020)

In article number 1907945, Fang Wang, Qinghua Zhang, Xiaohao Zhou, Weida Hu, and co‐workers show that 2D materials exhibit excellent properties, such as atomic thinness, tunable bandgap, and high carrier mobility. The family of 2D materials is ceaselessly diversified and enriched, especially for the...

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Bibliographic Details
Published in:Advanced functional materials 2020-01, Vol.30 (5), p.n/a
Main Authors: Wang, Zhen, Wang, Peng, Wang, Fang, Ye, Jiafu, He, Ting, Wu, Feng, Peng, Meng, Wu, Peisong, Chen, Yunfeng, Zhong, Fang, Xie, Runzhang, Cui, Zhuangzhuang, Shen, Liang, Zhang, Qinghua, Gu, Lin, Luo, Man, Wang, Yang, Chen, Huawei, Zhou, Peng, Pan, Anlian, Zhou, Xiaohao, Zhang, Lili, Hu, Weida
Format: Article
Language:English
Subjects:
broadband photodetection
field‐effect transistors
mobility
on‐off ratio
PtS2
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Summary:In article number 1907945, Fang Wang, Qinghua Zhang, Xiaohao Zhou, Weida Hu, and co‐workers show that 2D materials exhibit excellent properties, such as atomic thinness, tunable bandgap, and high carrier mobility. The family of 2D materials is ceaselessly diversified and enriched, especially for the recently investigated noble metal dichalcogenides. Narrow bandgap noble metal dichalcogenides with good stability have become promising candidates for fabricating high performance electronic and novel optoelectronic devices.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202070027