Dimensional Crossover and Dually Transitional Magnetoresistance in Vanadium Disulfide

• Published in: Advanced functional materials 2024-12
• Main Authors: Li, Shuaixing, Liu, Luhao, Dong, Xiansheng, Xu, Ke, Tang, Jiachen, Li, Yuan, Nie, Yuefeng, Hao, Yufeng, Shi, Yi, Li, Songlin
• Format: Article
• Language: English
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202406931

The concepts of quantum interference and charge localization have profoundly influenced the understanding of electronic conductivity in materials. While magnetoresistance behavior with monotonic or singly transitional dependence on applied magnetic fields is widely observed in different materials, it remains scarce to find one that features multiple transitions in magnetoresistance. Here, the effects of dimensional crossover on electronic and magneto‐transport behavior in vanadium disulfide (VS 2 ) are reported. Dual transitions in magnetoresistance are observed in 5 nm VS 2 nanosheets, resulting from the competition of multiple mechanisms relevant to charge transport as the external magnetic field changes. The nontrivial magneto‐transport phenomenon revealed in the system is attributed to the effect of strong electron correlation and the delicate interplay among spin, orbital, and structural degrees of freedom. These appealing physical properties make 2D VS 2 a promising platform for exploring exotic electronic phenomena.