Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N ‐Shape Switching Transistors

• Published in: Advanced functional materials 2024-09
• Main Authors: Seo, Juhyung, Kang, Seungme, Kumar, Divake, Shin, Wonjun, Cho, Jinill, Kim, Taesung, Kim, Yeongkwon, Jang, Byung Chul, Trivedi, Amit R., Yoo, Hocheon
• Format: Article
• Language: English
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202411348

In this study, a hybrid organic‐inorganic field‐effect transistor (FET) is proposed with n ‐type zinc‐tin oxide (ZTO) and p ‐type dinaphtho[2,3‐b:2′,3′‐f] thieno[3,2‐b]thiophene (DNTT), presenting two applications: (1) random number generator (RNG) and (2) spiking neuron. Interface challenges lead to operational instabilities such as bias stress and hysteresis due to trap site formation from oxide surface hydroxyl groups. However, these trap sites are utilized to produce unstable noise for RNG. Also, the impact of an internal interlayer is explored to mitigate instability in the negative transconductance (NTC) effect. This interlayer enhances material compatibility, improving turn‐on voltage, on‐off current ratio, and reducing hysteresis in the FET. These improvements highlight and maximize the robustness of NTC characteristics. Utilizing this behavior, a spiking neuron is demonstrated that emulates neuronal spiking and generates neuronal spike signals.