Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry

A large magnetoresistance (MR) effect of few‐layers graphene between two non‐magnetic metal electrodes with current perpendicular to graphene plane is studied. A non‐saturation and anisotropic MR with the value over 60% at 14 T is observed in a two‐layer graphene stack at room temperature. The resis...

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Published in:Advanced materials (Weinheim) 2012-04, Vol.24 (14), p.1862-1866
Main Authors: Liao, Zhi-Min, Wu, Han-Chun, Kumar, Shishir, Duesberg, Georg S., Zhou, Yang-Bo, Cross, Graham L. W., Shvets, Igor V., Yu, Da-Peng
Format: Article
Language:English
Subjects:
anisotropic MR
Electrodes
Graphite - chemistry
Magnetics
magnetoresistance
multilayer graphene
Silicon Dioxide - chemistry
Temperature
temperature dependence
weak antilocalization
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container_issue 14
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container_title Advanced materials (Weinheim)
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creator Liao, Zhi-Min
Wu, Han-Chun
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description A large magnetoresistance (MR) effect of few‐layers graphene between two non‐magnetic metal electrodes with current perpendicular to graphene plane is studied. A non‐saturation and anisotropic MR with the value over 60% at 14 T is observed in a two‐layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.
doi_str_mv 10.1002/adma.201104796
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subjects anisotropic MR
Electrodes
Graphite - chemistry
Magnetics
magnetoresistance
multilayer graphene
Silicon Dioxide - chemistry
Temperature
temperature dependence
weak antilocalization
title Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry
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