Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth (Adv. Mater. 13/2015)

On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-04, Vol.27 (13), p.2125-2125
Main Authors: Loitsch, Bernhard, Rudolph, Daniel, Morkötter, Stefanie, Döblinger, Markus, Grimaldi, Gianluca, Hanschke, Lukas, Matich, Sonja, Parzinger, Eric, Wurstbauer, Ursula, Abstreiter, Gerhard, Finley, Jonathan J., Koblmüller, Gregor
Format: Article
Language:English
Subjects:
growth
nanowires
optical properties
quantum confinement
structural properties
Online Access:Get full text
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Summary:On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. Cover by Christoph Hohmann, Nanosystems Initiative Munich (NIM).
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201570086