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Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth (Adv. Mater. 13/2015)

On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound...

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Published in:Advanced materials (Weinheim) 2015-04, Vol.27 (13), p.2125-2125
Main Authors: Loitsch, Bernhard, Rudolph, Daniel, Morkötter, Stefanie, Döblinger, Markus, Grimaldi, Gianluca, Hanschke, Lukas, Matich, Sonja, Parzinger, Eric, Wurstbauer, Ursula, Abstreiter, Gerhard, Finley, Jonathan J., Koblmüller, Gregor
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container_issue 13
container_start_page 2125
container_title Advanced materials (Weinheim)
container_volume 27
creator Loitsch, Bernhard
Rudolph, Daniel
Morkötter, Stefanie
Döblinger, Markus
Grimaldi, Gianluca
Hanschke, Lukas
Matich, Sonja
Parzinger, Eric
Wurstbauer, Ursula
Abstreiter, Gerhard
Finley, Jonathan J.
Koblmüller, Gregor
description On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. Cover by Christoph Hohmann, Nanosystems Initiative Munich (NIM).
doi_str_mv 10.1002/adma.201570086
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subjects growth
nanowires
optical properties
quantum confinement
structural properties
title Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth (Adv. Mater. 13/2015)
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