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Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth (Adv. Mater. 13/2015)
On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound...
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Published in: | Advanced materials (Weinheim) 2015-04, Vol.27 (13), p.2125-2125 |
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Main Authors: | , , , , , , , , , , , |
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container_end_page | 2125 |
container_issue | 13 |
container_start_page | 2125 |
container_title | Advanced materials (Weinheim) |
container_volume | 27 |
creator | Loitsch, Bernhard Rudolph, Daniel Morkötter, Stefanie Döblinger, Markus Grimaldi, Gianluca Hanschke, Lukas Matich, Sonja Parzinger, Eric Wurstbauer, Ursula Abstreiter, Gerhard Finley, Jonathan J. Koblmüller, Gregor |
description | On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. Cover by Christoph Hohmann, Nanosystems Initiative Munich (NIM). |
doi_str_mv | 10.1002/adma.201570086 |
format | article |
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subjects | growth nanowires optical properties quantum confinement structural properties |
title | Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth (Adv. Mater. 13/2015) |
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