2D Materials: Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls (Adv. Mater. 25/2015)

On page 3803, M.‐H. Jo and co‐workers demonstrate heteroepitaxial growth of MoS2 and WS2 monolayer (ML) semiconductors. Two different growth modes, i.e., vertical stacking and lateral stitching, can be controlled by the nucleation kinetics during sequential monolayer growth. These enable large‐area...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-07, Vol.27 (25), p.3839-3839
Main Authors: Heo, Hoseok, Sung, Ji Ho, Jin, Gangtae, Ahn, Ji-Hoon, Kim, Kyungwook, Lee, Myoung-Jae, Cha, Soonyoung, Choi, Hyunyong, Jo, Moon-Ho
Format: Article
Language:English
Subjects:
2D materials
heterostructures
hexagonal transition-metal dichalcogenides
monolayer semiconductors
superlattices
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Summary:On page 3803, M.‐H. Jo and co‐workers demonstrate heteroepitaxial growth of MoS2 and WS2 monolayer (ML) semiconductors. Two different growth modes, i.e., vertical stacking and lateral stitching, can be controlled by the nucleation kinetics during sequential monolayer growth. These enable large‐area ML heterostructures to be fabricated without interlayer rotation misfits; thereby, this method can offer possibilities for the realization of controlled 2D semiconductor superstructures on large scales.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201570169