Room-Temperature Quantum Transport Signatures in Graphene/LaAlO 3 /SrTiO 3 Heterostructures

High mobility graphene field-effect devices, fabricated on the complex-oxide heterostructure LaAlO /SrTiO , exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short-range and phonon contributions to scattering. The ab...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2017-03, Vol.29 (9)
Main Authors: Jnawali, Giriraj, Huang, Mengchen, Hsu, Jen-Feng, Lee, Hyungwoo, Lee, Jung-Woo, Irvin, Patrick, Eom, Chang-Beom, D'Urso, Brian, Levy, Jeremy
Format: Article
Language:English
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Summary:High mobility graphene field-effect devices, fabricated on the complex-oxide heterostructure LaAlO /SrTiO , exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short-range and phonon contributions to scattering. The ability to maintain pseudospin coherence at room temperature holds promise for the realization of new classical and quantum information technologies.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201603488