Memristors: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (Adv. Mater. 14/2016)

As information bits of 0's and 1's are stored in crosspoint tantalum oxide memristors, or resistive random access memory (RRAM) cells, nanoscale‐resolution in operando X‐ray transmission spectromicroscopy is used by J. P. Strachan and co‐workers, as reported on page 2772, to directly obser...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-04, Vol.28 (14), p.2771-2771
Main Authors: Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Kilcoyne, Arthur L. David, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, Williams, R. Stanley
Format: Article
Language:English
Subjects:
memristors
oxygen migration
RRAM
spectromicroscopy
thermophoresis
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Summary:As information bits of 0's and 1's are stored in crosspoint tantalum oxide memristors, or resistive random access memory (RRAM) cells, nanoscale‐resolution in operando X‐ray transmission spectromicroscopy is used by J. P. Strachan and co‐workers, as reported on page 2772, to directly observe oxygen migration and clustering, revealing an important operation and failure mechanism of RRAM, a frontrunner technology for next‐generation computer memory.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201670096