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Quicker and More Zn 2+ Storage Predominantly from the Interface

Aqueous zinc-ion batteries are highly desirable for large-scale energy storage because of their low cost and high-level safety. However, achieving high energy and high power densities simultaneously is challenging. Herein, a VO sub-nanometer cluster/reduced graphene oxide (rGO) cathode material comp...

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Published in:Advanced materials (Weinheim) 2021-07, Vol.33 (26), p.e2100359
Main Authors: Dai, Yuhang, Liao, Xiaobin, Yu, Ruohan, Li, Jinghao, Li, Jiantao, Tan, Shuangshuang, He, Pan, An, Qinyou, Wei, Qiulong, Chen, Lineng, Hong, Xufeng, Zhao, Kangning, Ren, Yang, Wu, Jinsong, Zhao, Yan, Mai, Liqiang
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cited_by cdi_FETCH-LOGICAL-c1071-b671e6d0f407db0360162a354b692162388af90d91fd2251458db2016071292a3
cites cdi_FETCH-LOGICAL-c1071-b671e6d0f407db0360162a354b692162388af90d91fd2251458db2016071292a3
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container_issue 26
container_start_page e2100359
container_title Advanced materials (Weinheim)
container_volume 33
creator Dai, Yuhang
Liao, Xiaobin
Yu, Ruohan
Li, Jinghao
Li, Jiantao
Tan, Shuangshuang
He, Pan
An, Qinyou
Wei, Qiulong
Chen, Lineng
Hong, Xufeng
Zhao, Kangning
Ren, Yang
Wu, Jinsong
Zhao, Yan
Mai, Liqiang
description Aqueous zinc-ion batteries are highly desirable for large-scale energy storage because of their low cost and high-level safety. However, achieving high energy and high power densities simultaneously is challenging. Herein, a VO sub-nanometer cluster/reduced graphene oxide (rGO) cathode material composed of interfacial VOC bonds is artificially constructed. Therein, a new mechanism is revealed, where Zn ions are predominantly stored at the interface between VO and rGO, which causes anomalous valence changes compared to conventional mechanisms and exploits the storage ability of non-energy-storing active yet highly conductive rGO. Further, this interface-dominated storage triggers decoupled transport of electrons/Zn ions, and the reversible destruction/reconstruction allows the interface to store more ions than the bulk. Finally, an ultrahigh rate capability (174.4 mAh g at 100 A g , i.e., capacity retention of 39.4% for a 1000-fold increase in current density) and a high capacity (443 mAh g at 100 mA g , exceeding the theoretical capacities of each interfacial component) are achieved. Such interface-dominated storage is an exciting way to build high-energy- and high-power-density devices.
doi_str_mv 10.1002/adma.202100359
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