High-Performance Solution-Processed 2D P-Type WSe 2 Transistors and Circuits through Molecular Doping

• Published in: Advanced materials (Weinheim) 2023-02, Vol.35 (7), p.e2208934
• Main Authors: Zou, Taoyu, Kim, Hyun-Jun, Kim, Soonhyo, Liu, Ao, Choi, Min-Yeong, Jung, Haksoon, Zhu, Huihui, You, Insang, Reo, Youjin, Lee, Woo-Ju, Kim, Yong-Sung, Kim, Cheol-Joo, Noh, Yong-Young
• Format: Article
• Language: English
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.202208934

Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br -doped WSe transistors show a field-effect hole mobility of more than 27 cm  V  s , and a high on/off current ratio of ≈10 , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe and n-type MoS layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (V ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.