Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons (Adv. Mater. Interfaces 21/2023)

Plasmonic Nanotags In article number 2300209, Maria Mendes Martins and co‐workers represent here the investigation of the silicon dioxide‐silicon carbide (SiO2‐4H‐SiC) system with nanometer depth‐resolution low‐energy muon spin rotation spectroscopy. Approximately 100% spin polarized muons (μ+) are...

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Bibliographic Details
Published in:Advanced materials interfaces 2023-07, Vol.10 (21), p.n/a
Main Authors: Mendes Martins, Maria, Kumar, Piyush, Woerle, Judith, Ni, Xiaojie, Grossner, Ulrike, Prokscha, Thomas
Format: Article
Language:English
Subjects:
interface defects
low energy muons
muon spin spectroscopy
silicon
silicon carbide
Online Access:Get full text
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Summary:Plasmonic Nanotags In article number 2300209, Maria Mendes Martins and co‐workers represent here the investigation of the silicon dioxide‐silicon carbide (SiO2‐4H‐SiC) system with nanometer depth‐resolution low‐energy muon spin rotation spectroscopy. Approximately 100% spin polarized muons (μ+) are used as probes in thin films. In particular, the interface formed between SiO2(on top) and SiC (below), understanding of which is crucial for high‐power device applications, is studied. By measuring the muon final state formed in the different layers, structural properties of the sample are studied, and the information about the electrical environment and defects present in the sample can be extracted.
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.202370066