Asymmetric Split‐Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter

Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p‐type and n‐type) in a thin‐film transistor with a high‐performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gai...

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Bibliographic Details
Published in:Advanced materials technologies 2016-07, Vol.1 (4), p.n/a
Main Authors: Yoo, Hocheon, Smits, Edsger C. P., van Breemen, Albert J. J. M., van der Steen, Jan‐Laurens P. J., Torricelli, Fabrizio, Ghittorelli, Matteo, Lee, Jiyoul, Gelinck, Gerwin H., Kim, Jae‐Joon
Format: Article
Language:English
Subjects:
charge injection
complementary organic transistor
organic ambipolar semiconductor
organic CMOS inverter
split‐gate transistor
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Summary:Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p‐type and n‐type) in a thin‐film transistor with a high‐performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.
ISSN:2365-709X
2365-709X
DOI:10.1002/admt.201600044