Vertical Van Der Waals Epitaxy of p‐Mo x Re 1‐ X s 2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

• Published in: Advanced optical materials 2024-04, Vol.12 (12)
• Main Authors: Jiang, Zhongwei, Zhou, Jie, Li, Bo, Ma, Zhengweng, Huang, Zheng, Yang, Yongkai, Zhang, Yating, Huang, Yeying, Zhang, Huile, Fan, Kangkai, Li, Yu, Liu, Xinke
• Format: Article
• Language: English
• ISSN: 2195-1071; 2195-1071
• DOI: 10.1002/adom.202302613

van der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p‐Mo x Re 1‐ x S 2 /GaN ( x = 0.10 ± 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed‐dimensional stacking, p ‐type doping, vertical device design, and type‐II band alignment. By integrating horizontal, vertical, and quasi‐vertical devices on a Free‐standing (FS)‐GaN substrate, the vertical p‐Mo x Re 1‐ x S 2 /GaN device demonstrates superior performance, including high I light / I dark ratio (1.48 × 10 6 ), large Responsivity (888.69 AW −1 ), high specific detectivity ( D * ) (6.13 × 10 14 Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near‐infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro‐integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.