Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS 2 /WSe 2 Heterojunction for Reconfigurable Logic Operations

A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS 2 and WSe 2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bot...

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Bibliographic Details
Published in:Advanced electronic materials 2023-01, Vol.9 (1)
Main Authors: Shingaya, Yoshitaka, Zulkefli, Amir, Iwasaki, Takuya, Hayakawa, Ryoma, Nakaharai, Shu, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka
Format: Article
Language:English
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Summary:A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS 2 and WSe 2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bottom‐ and top‐gate voltages acting as two input signals and the drain current ( I d ) monitored as an output signal. Importantly, a single dual‐gate AAT exhibits all the two‐input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage ( V d )‐induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202200704