Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS 2 /WSe 2 Heterojunction for Reconfigurable Logic Operations

A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS 2 and WSe 2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bot...

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Published in:Advanced electronic materials 2023-01, Vol.9 (1)
Main Authors: Shingaya, Yoshitaka, Zulkefli, Amir, Iwasaki, Takuya, Hayakawa, Ryoma, Nakaharai, Shu, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka
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cited_by cdi_FETCH-LOGICAL-c844-b6ac6851c25178b146fe6028791c6bcb029eb3312fc5ce2882e47847ff3339183
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container_title Advanced electronic materials
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creator Shingaya, Yoshitaka
Zulkefli, Amir
Iwasaki, Takuya
Hayakawa, Ryoma
Nakaharai, Shu
Watanabe, Kenji
Taniguchi, Takashi
Wakayama, Yutaka
description A dual‐gate anti‐ambipolar transistor (AAT) with a two‐dimensional ReS 2 and WSe 2 heterojunction is developed. The characteristic Λ‐shaped transfer curves yielded by the bottom‐gate voltage are effectively controlled by the top‐gate voltage. This feature is applied to logic operations, with the bottom‐ and top‐gate voltages acting as two input signals and the drain current ( I d ) monitored as an output signal. Importantly, a single dual‐gate AAT exhibits all the two‐input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage ( V d )‐induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.
doi_str_mv 10.1002/aelm.202200704
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title Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS 2 /WSe 2 Heterojunction for Reconfigurable Logic Operations
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