Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe 2

• Published in: Advanced electronic materials 2023-10, Vol.9 (10)
• Main Authors: Cheng, Zhixuan, Jia, Xionghui, Cheng, Xing, Song, Yiwen, Ran, Yuqia, Li, Minglai, Xu, Wanjin, Li, Yanping, Ye, Yu, Dai, Lun
• Format: Article
• Language: English
• ISSN: 2199-160X; 2199-160X
• DOI: 10.1002/aelm.202300268

2D MoTe 2 is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical‐vapor‐deposition‐grown MoTe 2 usually presents p‐type characteristics. In order to realize basic electronic units like complementary metal‐oxide‐semiconductor (CMOS) inverter, controllable fabrication of p‐ and n‐type transistors at large scale is of vital importance. Here, large‐scale MoTe 2 n‐channel field‐effect transistor (n‐FET) arrays are successfully fabricated with seamless coplanar metallic 1T′‐WTe 2 contacts to reduce contact resistance. High‐ k HfO 2 serves as a gate dielectric and its atomic‐layer‐deposition (ALD) process causes an n‐doping effect on the 2H‐MoTe 2 channel. The FETs perform typical n‐type characteristics with average electron density and on/off ratio of ≈1.7 × 10 13  cm −2  and 2.1 × 10 4 , respectively. Furthermore, large‐scale homogeneous CMOS inverter arrays are fabricated, showing clear logic swing with low power consumption (≈0.4 nW) and high device yield (≈92%). Notably, their voltage transfer characteristics exhibit small hysteresis, and they work well after being kept in air for 16 months, indicating high device stability. The statistical results show that both the n‐FETs and CMOS inverters have high uniformity and reliability in performance. Significantly, this fabrication method is free from transfer processes and compatible with traditional silicon technology. This work paves the way for the application of few‐layer MoTe 2 in semiconductor nanoelectronics integration.