Hole‐Mediated RKKY Interaction in 2D Ferromagnetic CrTe 2 Ultra‐Thin Films

The rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe 2 , a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the underlying...

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Bibliographic Details
Published in:Advanced electronic materials 2024-01, Vol.10 (1)
Main Authors: Wang, Jin, Xu, Yongkang, Wang, Shuanghai, Dai, Xingze, Yan, Pengfei, Zhou, Jian, Wang, Ruifeng, Xu, Yongbing, He, Liang
Format: Article
Language:English
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Summary:The rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe 2 , a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the underlying mechanism responsible for its global magnetism remains unclear. This work focuses on investigating the magneto‐transport properties of ultra‐thin CrTe 2 Field Effect Transistor (FET) under the influence of top gate biases. The application of gate voltage ranging from 25 to −15 V tunes its coercivity ( H C ) and Curie temperature ( T C ) (from 152 to 191 K). Notably, a linear correlation is observed between the T C and the hole concentration () in the CrTe 2 film, indicating the involvement of the Ruderman–Kittel–Kasuya–Yosida interaction. This experimental analysis sheds light on the mechanism of the CrTe 2 ’s ferromagnetism and paves the way for future advancements and applications in this material.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202300646