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Exploring Multi‐Bit Logic In‐Memory with Memristive HfO 2 ‐Based Ferroelectric Tunnel Junctions (Adv. Electron. Mater. 3/2024)

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Bibliographic Details
Published in:	Advanced electronic materials 2024-03, Vol.10 (3)
Main Authors:	Kho, Wonwoo, Hwang, Hyunjoo, Ahn, Seung‐Eon
Format:	Article
Language:	English
Online Access:	Get full text
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