Loading…
Flocculating‐Regulated TiO 2 Deposition Enables the Synergistic Effect of Doping for Perovskite Solar Cells with Efficiency Exceeding 25.8
The planar perovskite solar cells (PSCs) using TiO 2 as the electron transport layer (ETL) are undergoing a stagnated efficiency improvement, which the inferior TiO 2 ETL mainly limits. Herein, a flocculating‐regulated TiO 2 deposition using SnCl 2 ·2H 2 O is reported as the flocculate to control th...
Saved in:
Published in: | Advanced energy materials 2024-12 |
---|---|
Main Authors: | , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The planar perovskite solar cells (PSCs) using TiO 2 as the electron transport layer (ETL) are undergoing a stagnated efficiency improvement, which the inferior TiO 2 ETL mainly limits. Herein, a flocculating‐regulated TiO 2 deposition using SnCl 2 ·2H 2 O is reported as the flocculate to control the nanoparticle size finely for optimizing TiO 2 deposition and to achieve a synergistic Sn doping. The SnCl 2 ·2H 2 O incorporated into bath precursor can bridge‐link the suspended nanoparticles, which promotes the precipitation of large‐sized nanoparticles and leaves the smaller‐sized nanoparticles for deposition, leading to a compact TiO 2 film with marked reduced surface roughness. Meanwhile, along with flocculating‐regulated TiO 2 deposition, it can also be achieved the Sn‐doping of TiO 2 , which increases the conductivity of TiO 2 thin films by ≈2.5 times. As a consequence, attributing to the optimized interface contact and accelerated interfacial electron transport, the planar PSCs achieved a certification efficiency of 25.85%, the highest value among the TiO 2 ‐based planar PSCs to date. In addition, the PSCs can maintain 99% of their initial efficiency after more than 4500 h of storage in ambient air, showing excellent stability. |
---|---|
ISSN: | 1614-6832 1614-6840 |
DOI: | 10.1002/aenm.202403200 |