CMOS Compatible Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions for Neuromorphic Devices

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Bibliographic Details
Published in:Advanced intelligent systems 2019-09, Vol.1 (5)
Main Authors: Mittermeier, Bernhard, Dörfler, Andreas, Horoschenkoff, Anna, Katoch, Rajesh, Schindler, Christina, Ruediger, Andreas, Kolhatkar, Gitanjali
Format: Article
Language:English
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ISSN:2640-4567
2640-4567
DOI:10.1002/aisy.201900034