Low‐temperature dephasing in disordered conductors: experimental aspects

What is the lowest temperature to which one can trace the growth of the dephasing time τφ in low‐dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of τφ (hot‐electr...

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Bibliographic Details
Published in:Annalen der Physik 1999-11, Vol.511 (7-9), p.559-568
Main Author: Gershenson, M.E.
Format: Article
Language:English
Subjects:
dephasing
electron‐phonon interaction
low‐dimensional conductors
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Summary:What is the lowest temperature to which one can trace the growth of the dephasing time τφ in low‐dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of τφ (hot‐electron effects, dephasing by external noise). Recent progress in our understanding of the electron‐phonon interaction in disordered conductors is also briefly discussed.
ISSN:0003-3804
1521-3889
DOI:10.1002/andp.199951107-903