Metal oxide gate electrodes for advanced CMOS technology

We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are ar...

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Bibliographic Details
Published in:Annalen der Physik 2004-01, Vol.516 (1-2), p.31-34
Main Authors: Fröhlich, K., Hušeková, K., Oszi, Z., Hooker, J.C., Fanciulli, M., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F.
Format: Article
Language:English
Subjects:
CMOS
conducting oxides
MOCVD
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Summary:We have prepared RuO2 and SrRuO3 thin films for application as gate electrodes in CMOS technology. RuO2 and SrRuO3 films exhibit satisfactory stability in oxygen atmosphere at elevated temperatures. RuO2 films decompose in reducing atmosphere. Extracted work function values for RuO2 electrode are around 5.1 eV, confirming that RuO2 is a suitable candidate for pMOS gate electrode application.
ISSN:0003-3804
1521-3889
DOI:10.1002/andp.200451601-206