Low‐Temperature Atomic Layer Deposition of MoS 2 Films

Wet chemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 S for the low‐temperature synthesis of MoS 2 . This observation motivated an investigation of Mo(NMe 2 ) 4 as a volatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films. Herein we report that Mo(NMe...

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Bibliographic Details
Published in:Angewandte Chemie 2017-04, Vol.129 (18), p.5073-5077
Main Authors: Jurca, Titel, Moody, Michael J., Henning, Alex, Emery, Jonathan D., Wang, Binghao, Tan, Jeffrey M., Lohr, Tracy L., Lauhon, Lincoln J., Marks, Tobin J.
Format: Article
Language:English
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Summary:Wet chemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 S for the low‐temperature synthesis of MoS 2 . This observation motivated an investigation of Mo(NMe 2 ) 4 as a volatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films. Herein we report that Mo(NMe 2 ) 4 enables MoS 2 film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift‐off patterning for the straightforward fabrication of diverse device structures.
ISSN:0044-8249
1521-3757
DOI:10.1002/ange.201611838