Substrate-Induced Strain Upshot on the Optical and Optoelectronic Properties of Trilayer MoS 2

• Published in: Chemphyschem 2024-12, p.e202400829
• Main Authors: Mondal, Sourav, Basak, Durga
• Format: Article
• Language: English
• ISSN: 1439-4235; 1439-7641
• DOI: 10.1002/cphc.202400829

The characteristics of 2D layered MoS film are highly dependent on the substrate it is grown on which leaves us privileged to achieve unique and tunable properties. In this study, trilayer MoS films have been grown on fused quartz, crystalline quartz (z-cut), sapphire (0001), and silicon (100) substrates. MoS film grows as freestanding on amorphous fused quartz, while it experiences an in-plane tensile strain on the sapphire and silicon. Unprecedentedly we show that due to a large mismatch in the lattice parameter as well as in the thermal expansion coefficient, MoS grows with a significant compressive strain both along both in-plane on the crystalline quartz. The developed strain causes an alteration in its electronic structure, causing a 30 meV blue shift in the photoluminescence peak and an increased band gap in addition to fewer sulphur vacancies. Comparatively, the film on sapphire having tensile strain along the in-plane exhibits more sulphur vacancies increasing the electron density. The photoresponse time, photosensitivity, and charge separation distinctly vary for the MoS films depending on the substrates. This study underscores the influence of substrate on MoS film opening further research scopes on tunable properties owing to 2D layer-substrate interactions.