Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition

The room temperature epitaxial growth of CeO 2 on lattice matched (001) LaAlO 3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po 2 ) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electro...

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Published in:Crystal research and technology (1979) 2013-05, Vol.48 (5), p.308-313
Main Authors: Ho, Yen‐Teng, Chang, Kuo‐Shu, Liu, Kou‐Chen, Hsieh, Li‐Zen, Liang, Mei‐Hui
Format: Article
Language:English
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Summary:The room temperature epitaxial growth of CeO 2 on lattice matched (001) LaAlO 3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po 2 ) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO 2 can be achieved at room temperature under Po 2 less than 2 × 10 −3 Torr. The best quality of grown film is obtained under Po 2 = 2 × 10 −5 Torr and degraded under Po 2 = 2 × 10 −6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO 2 and LAO is confirmed to be (001)CeO 2 //(001)LAO, [100] CeO2 //[110] LAO and [010] CeO2 //[ 10] LAO . No obvious reduction reaction occurred, from Ce +4 turned into Ce +3 states, as reducing oxygen partial pressure during growth by PLD.
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.201300002