Loading…
Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition
The room temperature epitaxial growth of CeO 2 on lattice matched (001) LaAlO 3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po 2 ) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electro...
Saved in:
| Published in: | Crystal research and technology (1979) 2013-05, Vol.48 (5), p.308-313 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483 |
| container_end_page | 313 |
| container_issue | 5 |
| container_start_page | 308 |
| container_title | Crystal research and technology (1979) |
| container_volume | 48 |
| creator | Ho, Yen‐Teng Chang, Kuo‐Shu Liu, Kou‐Chen Hsieh, Li‐Zen Liang, Mei‐Hui |
| description | The room temperature epitaxial growth of CeO
2
on lattice matched (001) LaAlO
3
substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po
2
) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO
2
can be achieved at room temperature under Po
2
less than 2 × 10
−3
Torr. The best quality of grown film is obtained under Po
2
= 2 × 10
−5
Torr and degraded under Po
2
= 2 × 10
−6
Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO
2
and LAO is confirmed to be (001)CeO
2
//(001)LAO, [100]
CeO2
//[110]
LAO
and [010]
CeO2
//[
10]
LAO
. No obvious reduction reaction occurred, from Ce
+4
turned into Ce
+3
states, as reducing oxygen partial pressure during growth by PLD. |
| doi_str_mv | 10.1002/crat.201300002 |
| format | article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_crat_201300002</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_crat_201300002</sourcerecordid><originalsourceid>FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483</originalsourceid><addsrcrecordid>eNo9kM1Lw0AQxRdRMFavnueoh8T9yiY5luAXBArSoxBms1ONpN2wm6L9702x-C6Px3szhx9jt4JngnP50AWcMsmF4rPkGUtELkWqeVGds4RLJdNjdcmuYvyaF5XRMmHvb95vYaLtSPP5PhDQ2E_40-MAH8F_T5_gN3DHubiHmlYgwe9OscHlsAIF9gDjfojkYMBIARyNPvZT73fX7GKDc3Nz8gVbPz2u65e0WT2_1ssm7UotU0XCFkWed5VRtiBDnbI6N-QqpzWWlqypuDLojKxKg1g6IY1SVjiLJepSLVj297YLPsZAm3YM_RbDoRW8PaJpj2jafzTqFwaRVPQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition</title><source>Wiley</source><creator>Ho, Yen‐Teng ; Chang, Kuo‐Shu ; Liu, Kou‐Chen ; Hsieh, Li‐Zen ; Liang, Mei‐Hui</creator><creatorcontrib>Ho, Yen‐Teng ; Chang, Kuo‐Shu ; Liu, Kou‐Chen ; Hsieh, Li‐Zen ; Liang, Mei‐Hui</creatorcontrib><description>The room temperature epitaxial growth of CeO
2
on lattice matched (001) LaAlO
3
substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po
2
) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO
2
can be achieved at room temperature under Po
2
less than 2 × 10
−3
Torr. The best quality of grown film is obtained under Po
2
= 2 × 10
−5
Torr and degraded under Po
2
= 2 × 10
−6
Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO
2
and LAO is confirmed to be (001)CeO
2
//(001)LAO, [100]
CeO2
//[110]
LAO
and [010]
CeO2
//[
10]
LAO
. No obvious reduction reaction occurred, from Ce
+4
turned into Ce
+3
states, as reducing oxygen partial pressure during growth by PLD.</description><identifier>ISSN: 0232-1300</identifier><identifier>EISSN: 1521-4079</identifier><identifier>DOI: 10.1002/crat.201300002</identifier><language>eng</language><ispartof>Crystal research and technology (1979), 2013-05, Vol.48 (5), p.308-313</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483</citedby><cites>FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ho, Yen‐Teng</creatorcontrib><creatorcontrib>Chang, Kuo‐Shu</creatorcontrib><creatorcontrib>Liu, Kou‐Chen</creatorcontrib><creatorcontrib>Hsieh, Li‐Zen</creatorcontrib><creatorcontrib>Liang, Mei‐Hui</creatorcontrib><title>Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition</title><title>Crystal research and technology (1979)</title><description>The room temperature epitaxial growth of CeO
2
on lattice matched (001) LaAlO
3
substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po
2
) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO
2
can be achieved at room temperature under Po
2
less than 2 × 10
−3
Torr. The best quality of grown film is obtained under Po
2
= 2 × 10
−5
Torr and degraded under Po
2
= 2 × 10
−6
Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO
2
and LAO is confirmed to be (001)CeO
2
//(001)LAO, [100]
CeO2
//[110]
LAO
and [010]
CeO2
//[
10]
LAO
. No obvious reduction reaction occurred, from Ce
+4
turned into Ce
+3
states, as reducing oxygen partial pressure during growth by PLD.</description><issn>0232-1300</issn><issn>1521-4079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kM1Lw0AQxRdRMFavnueoh8T9yiY5luAXBArSoxBms1ONpN2wm6L9702x-C6Px3szhx9jt4JngnP50AWcMsmF4rPkGUtELkWqeVGds4RLJdNjdcmuYvyaF5XRMmHvb95vYaLtSPP5PhDQ2E_40-MAH8F_T5_gN3DHubiHmlYgwe9OscHlsAIF9gDjfojkYMBIARyNPvZT73fX7GKDc3Nz8gVbPz2u65e0WT2_1ssm7UotU0XCFkWed5VRtiBDnbI6N-QqpzWWlqypuDLojKxKg1g6IY1SVjiLJepSLVj297YLPsZAm3YM_RbDoRW8PaJpj2jafzTqFwaRVPQ</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Ho, Yen‐Teng</creator><creator>Chang, Kuo‐Shu</creator><creator>Liu, Kou‐Chen</creator><creator>Hsieh, Li‐Zen</creator><creator>Liang, Mei‐Hui</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201305</creationdate><title>Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition</title><author>Ho, Yen‐Teng ; Chang, Kuo‐Shu ; Liu, Kou‐Chen ; Hsieh, Li‐Zen ; Liang, Mei‐Hui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ho, Yen‐Teng</creatorcontrib><creatorcontrib>Chang, Kuo‐Shu</creatorcontrib><creatorcontrib>Liu, Kou‐Chen</creatorcontrib><creatorcontrib>Hsieh, Li‐Zen</creatorcontrib><creatorcontrib>Liang, Mei‐Hui</creatorcontrib><collection>CrossRef</collection><jtitle>Crystal research and technology (1979)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ho, Yen‐Teng</au><au>Chang, Kuo‐Shu</au><au>Liu, Kou‐Chen</au><au>Hsieh, Li‐Zen</au><au>Liang, Mei‐Hui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition</atitle><jtitle>Crystal research and technology (1979)</jtitle><date>2013-05</date><risdate>2013</risdate><volume>48</volume><issue>5</issue><spage>308</spage><epage>313</epage><pages>308-313</pages><issn>0232-1300</issn><eissn>1521-4079</eissn><abstract>The room temperature epitaxial growth of CeO
2
on lattice matched (001) LaAlO
3
substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po
2
) is demonstrated. X‐ray diffraction analysis with 2‐Theta/rocking curve/Phi‐scan, cross‐sectional transmission electron microscopy with selected‐area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO
2
can be achieved at room temperature under Po
2
less than 2 × 10
−3
Torr. The best quality of grown film is obtained under Po
2
= 2 × 10
−5
Torr and degraded under Po
2
= 2 × 10
−6
Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO
2
and LAO is confirmed to be (001)CeO
2
//(001)LAO, [100]
CeO2
//[110]
LAO
and [010]
CeO2
//[
10]
LAO
. No obvious reduction reaction occurred, from Ce
+4
turned into Ce
+3
states, as reducing oxygen partial pressure during growth by PLD.</abstract><doi>10.1002/crat.201300002</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0232-1300 |
| ispartof | Crystal research and technology (1979), 2013-05, Vol.48 (5), p.308-313 |
| issn | 0232-1300 1521-4079 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_crat_201300002 |
| source | Wiley |
| title | Room temperature epitaxial growth of (001) CeO 2 on (001) LaAlO 3 by pulsed laser deposition |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T21%3A49%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room%20temperature%20epitaxial%20growth%20of%20(001)%20CeO%202%20on%20(001)%20LaAlO%203%20by%20pulsed%20laser%20deposition&rft.jtitle=Crystal%20research%20and%20technology%20(1979)&rft.au=Ho,%20Yen%E2%80%90Teng&rft.date=2013-05&rft.volume=48&rft.issue=5&rft.spage=308&rft.epage=313&rft.pages=308-313&rft.issn=0232-1300&rft.eissn=1521-4079&rft_id=info:doi/10.1002/crat.201300002&rft_dat=%3Ccrossref%3E10_1002_crat_201300002%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c842-3e1b7755c963b7e6ec3b456ed9d44a8beb69036ad62986aa8d12633b1dba8a483%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |