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Amorphous Cu–In–S Nanoparticles as Precursors for CuInSe 2 Thin‐Film Solar Cells with a High Efficiency
CuInSe 2 (CISe) absorber layers for thin‐film solar cells were fabricated through the selenization of amorphous Cu–In–S nanoparticles, which were prepared by using a low‐temperature colloidal process within one minute without any external heating. Two strategies for obtaining highly dense CISe absor...
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Published in: | ChemSusChem 2013-07, Vol.6 (7), p.1282-1287 |
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Main Authors: | , , , , , , , , , |
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Language: | English |
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container_end_page | 1287 |
container_issue | 7 |
container_start_page | 1282 |
container_title | ChemSusChem |
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creator | Ahn, SeJin Choi, Yoo Jeong Kim, Kyunhwan Eo, Young‐Joo Cho, Ara Gwak, Jihye Yun, Jae Ho Shin, Keeshik Ahn, Seoung Kyu Yoon, Kyunghoon |
description | CuInSe
2
(CISe) absorber layers for thin‐film solar cells were fabricated through the selenization of amorphous Cu–In–S nanoparticles, which were prepared by using a low‐temperature colloidal process within one minute without any external heating. Two strategies for obtaining highly dense CISe absorber films were used in this work; the first was the modification of nanoparticle surface through chelate complexation with ethanolamine, and the second strategy utilized the lattice expansion that occurred when S atoms in the precursor particles were replaced with Se during selenization. The synergy of these two strategies allowed formation of highly dense CISe thin films, and devices fabricated using the absorber layer demonstrated efficiencies of up to 7.94 % under AM 1.5G illumination without an anti‐reflection coating. |
doi_str_mv | 10.1002/cssc.201200894 |
format | article |
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(CISe) absorber layers for thin‐film solar cells were fabricated through the selenization of amorphous Cu–In–S nanoparticles, which were prepared by using a low‐temperature colloidal process within one minute without any external heating. Two strategies for obtaining highly dense CISe absorber films were used in this work; the first was the modification of nanoparticle surface through chelate complexation with ethanolamine, and the second strategy utilized the lattice expansion that occurred when S atoms in the precursor particles were replaced with Se during selenization. The synergy of these two strategies allowed formation of highly dense CISe thin films, and devices fabricated using the absorber layer demonstrated efficiencies of up to 7.94 % under AM 1.5G illumination without an anti‐reflection coating.</abstract><doi>10.1002/cssc.201200894</doi><tpages>6</tpages></addata></record> |
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title | Amorphous Cu–In–S Nanoparticles as Precursors for CuInSe 2 Thin‐Film Solar Cells with a High Efficiency |
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