High-frequency transmission through metallic single-walled carbon nanotube interconnects

In this paper, high‐frequency transmission behavior of metallic single‐walled carbon nanotube (SWCNT) interconnects is investigated. The SWCNT is assumed to be lying over a doped Si substrate, in a transmission line configuration. A hybrid approach, combining quantum theory with classical distribute...

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Bibliographic Details
Published in:International journal of numerical modelling 2009-09, Vol.22 (5), p.369-378
Main Authors: Tahvili, M. S., Jahanmiri, S., Sheikhi, M. H.
Format: Article
Language:English
Subjects:
carbon nanotube
damping effects
dynamical impedance
high frequency
transmission line model
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Summary:In this paper, high‐frequency transmission behavior of metallic single‐walled carbon nanotube (SWCNT) interconnects is investigated. The SWCNT is assumed to be lying over a doped Si substrate, in a transmission line configuration. A hybrid approach, combining quantum theory with classical distributed‐element model is utilized to predict dynamical performance of the metallic SWCNT as a nano transmission line. Several aspects of high‐frequency performance of such interconnect, including the effect of SWCNT length and substrate doping level, is studied. A novel modification is proposed to take damping mechanisms effect caused by the imperfect conductance of substrate into account. The results show that the impact of limited conductivity of the substrate determines the dynamical behavior of short SWCNTs; whereas in case of long nanotubes, damping effects that arise from scattering mechanisms are dominant. Copyright © 2009 John Wiley & Sons, Ltd.
ISSN:0894-3370
1099-1204
DOI:10.1002/jnm.713