Properties of Er - doped layers grown from Er: YAG (YAP) crystalline targets by sub-picosecond laser deposition

Thin YAG (Y3Al5O12) and YAP (YAlO3) films doped with Er content were grown by sub‐picosecond (450 fs) KrF laser deposition from crystalline Er: YAG and Er: YAP laser rods. The influence of laser power density, substrate temperature, target‐ substrate distance and deposition ambient atmosphere (vacuu...

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Bibliographic Details
Published in:Laser physics letters 2004-05, Vol.1 (5), p.248-252
Main Authors: Jelinek, M., Klini, A., Oswald, J., Studnička, V., Fotakis, C., Macková, A.
Format: Article
Language:English
Subjects:
crystallinity
laser ablation
luminescence
thin films
waveguide laser
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Summary:Thin YAG (Y3Al5O12) and YAP (YAlO3) films doped with Er content were grown by sub‐picosecond (450 fs) KrF laser deposition from crystalline Er: YAG and Er: YAP laser rods. The influence of laser power density, substrate temperature, target‐ substrate distance and deposition ambient atmosphere (vacuum or oxygen) was studied. Results of morphological, compositional, structural and luminescence analysis are presented. Crystalline films have been obtained even for low substrate temperature. Luminescence corresponding to Er+3 ions was observed for all the samples. (© 2004 by ASTRO, Ltd. Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)
ISSN:1612-2011
1612-202X
DOI:10.1002/lapl.200310059