An improved intrinsic small-signal equivalent circuit model of delta-doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications

An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the device are extract...

Full description

Saved in:
Bibliographic Details
Published in:Microwave and optical technology letters 2003-06, Vol.37 (5), p.376-379
Main Authors: Guru, Vandana, Jogi, Jyotika, Gupta, Mridula, Vyas, H. P., Gupta, R. S.
Format: Article
Language:English
Subjects:
delta doped HEMT
gain
S parameters
small-signal equivalent circuit
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are also evaluated over the frequency range 1–26 GHz and show good agreement with experimental data. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 376–379, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10923
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.10923