High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates

Microstrip transmission lines with very low power loss of 0.4 dB/mm at 50 GHz have been fabricated on Si substrates using an optimized ion‐implantation process. These devices have the inherent advantages of smaller chip size and better power performance than CPW lines. Using the same approach, high‐...

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Published in:Microwave and optical technology letters 2004-10, Vol.43 (2), p.148-151
Main Authors: Chen, C. C., Hung, B. F., Chin, Albert, McAlister, S. P.
Format: Article
Language:English
Subjects:
CPW
ion implantation
microstrip lines
thin-film
VLSI
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description Microstrip transmission lines with very low power loss of 0.4 dB/mm at 50 GHz have been fabricated on Si substrates using an optimized ion‐implantation process. These devices have the inherent advantages of smaller chip size and better power performance than CPW lines. Using the same approach, high‐performance thin‐film microstrip lines are also developed, showing a loss of 0.9 dB/mm at 20 GHz. This approach is compatible with existing VLSI backend layout technology. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 148–151, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20404
doi_str_mv 10.1002/mop.20404
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subjects CPW
ion implantation
microstrip lines
thin-film
VLSI
title High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates
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