Effect of a nipi delta‐doping superlattice on In 1− x Ga x As/In 1− y Al y As amplitude modulator parameters

• Published in: Microwave and optical technology letters 2004-10, Vol.43 (2), p.168-173
• Main Authors: Tribuzy, C. V.‐B., Pires, M. P., Souza, P. L.
• Format: Article
• Language: English
• ISSN: 0895-2477; 1098-2760
• DOI: 10.1002/mop.20410

A theoretical study of the performance of amplitude modulators using a nipi delta‐doping superlattice in InGaAs/InAlAs multiple quantum‐well (QW) structures is presented. The structure is such that an n ‐type delta‐doping layer is placed at the center of the InGaAs QWs and a p ‐type is placed at the center of the InAlAs barriers. From the calculated absorption curves, modulator parameters such as CR, I L , and chirp are estimated and a comparison of the performance of an InGaAs/InAlAs modulator with and without the nipi delta‐doping superlattice is carried out. The study shows that an amplitude modulator containing a nipi delta‐doping superlattice in the InGaAs/InAlAs multiple QW structure presents an improved performance, compared to that without the doping superlattice, as long as the QW composition is adequately chosen. It is shown that for such structures, contrary to the undoped counterpart, it is, in principle, possible to achieve polarization insensitivity and appropriate chirp parameters simultaneously. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 168–173, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20410