Low-power PHEMT MMIC LNA for C-band applications

We report on design and performance of a low‐power‐consuming two‐stage MMIC LNA using AlGaAs/GaAs pseudomorphic HEMTs with 0.25‐μm T‐gates. The MMIC LNA showing a noise figure of 2.55 dB with 17‐dB associated gain at 5.8 GHz consumes only 18 mW, which is the lowest value of power consumption ever re...

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Bibliographic Details
Published in:Microwave and optical technology letters 2006-02, Vol.48 (2), p.253-255
Main Authors: Yuk, Jong Seol, Choi, Byoung Gun, Lee, You Sang, Park, Chul Soon, Kang, Sukhoon
Format: Article
Language:English
Subjects:
gate width
LNA
pseudomorphic HEMT
single current path
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Summary:We report on design and performance of a low‐power‐consuming two‐stage MMIC LNA using AlGaAs/GaAs pseudomorphic HEMTs with 0.25‐μm T‐gates. The MMIC LNA showing a noise figure of 2.55 dB with 17‐dB associated gain at 5.8 GHz consumes only 18 mW, which is the lowest value of power consumption ever reported to date from PHEMT MMIC LNAs around this frequency range, and is attributed to the optimization of the gate width and current, as well as the use of a circuit with a single current path. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48:253–255, 2006; Published Online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21320
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.21320