Novel back contact reflector for high efficiency and double‐graded Cu(In,Ga)Se 2 thin‐film solar cells

For highest efficiency Cu(In,Ga)Se 2 thin‐film solar cells, the V‐shaped bandgap grading can result in residual transmission through the absorber layer and parasitic absorbance in the Mo back contact. To improve the back contact reflectance, absorbers were grown in a multistage process on Mo/Al/InZn...

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Bibliographic Details
Published in:Progress in photovoltaics 2018-11, Vol.26 (11), p.894-900
Main Authors: Bissig, Benjamin, Carron, Romain, Greuter, Lukas, Nishiwaki, Shiro, Avancini, Enrico, Andres, Christian, Feurer, Thomas, Buecheler, Stephan, Tiwari, Ayodhya N.
Format: Article
Language:English
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Summary:For highest efficiency Cu(In,Ga)Se 2 thin‐film solar cells, the V‐shaped bandgap grading can result in residual transmission through the absorber layer and parasitic absorbance in the Mo back contact. To improve the back contact reflectance, absorbers were grown in a multistage process on Mo/Al/InZnO substrates. Additionally, ultrathin layers of Mo and MoSe X were introduced at the InZnO‐absorber interface. Effects of the different back contacts on device performance, absorber morphology, and composition are characterized and discussed. Finally, a numerical model is proposed to understand the experimentally observed increase in device current density of 0.3 to 0.8 mAcm −2 .
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.3029