Novel back contact reflector for high efficiency and double‐graded Cu(In,Ga)Se 2 thin‐film solar cells
For highest efficiency Cu(In,Ga)Se 2 thin‐film solar cells, the V‐shaped bandgap grading can result in residual transmission through the absorber layer and parasitic absorbance in the Mo back contact. To improve the back contact reflectance, absorbers were grown in a multistage process on Mo/Al/InZn...
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Published in: | Progress in photovoltaics 2018-11, Vol.26 (11), p.894-900 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | For highest efficiency Cu(In,Ga)Se
2
thin‐film solar cells, the V‐shaped bandgap grading can result in residual transmission through the absorber layer and parasitic absorbance in the Mo back contact. To improve the back contact reflectance, absorbers were grown in a multistage process on Mo/Al/InZnO substrates. Additionally, ultrathin layers of Mo and MoSe
X
were introduced at the InZnO‐absorber interface. Effects of the different back contacts on device performance, absorber morphology, and composition are characterized and discussed. Finally, a numerical model is proposed to understand the experimentally observed increase in device current density of 0.3 to 0.8 mAcm
−2
. |
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ISSN: | 1062-7995 1099-159X |
DOI: | 10.1002/pip.3029 |