High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

Low–temperature deposition of Si for thin‐film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open‐circuit voltage of these solar cells. In contrast, ion‐assisted deposition produces Si films with a minority‐carrier diffusion len...

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Bibliographic Details
Published in:Progress in photovoltaics 2001-09, Vol.9 (5), p.333-340
Main Authors: Oberbeck, Lars, Schmidt, Jan, Wagner, Thomas A., Bergmann, Ralf B.
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:Low–temperature deposition of Si for thin‐film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open‐circuit voltage of these solar cells. In contrast, ion‐assisted deposition produces Si films with a minority‐carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin‐film Si solar cell with a 20‐μm‐thick epitaxial layer achieves an open‐circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high‐temperature solar cell process steps. Copyright © 2001 John Wiley & Sons, Ltd.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.385