20·5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts

The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220°C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows fo...

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Bibliographic Details
Published in:Progress in photovoltaics 2006-11, Vol.14 (7), p.653-662
Main Authors: Brendle, W., Nguyen, V. X., Grohe, A., Schneiderlöchner, E., Rau, U., Palfinger, G., Werner, J. H.
Format: Article
Language:English
Subjects:
amorphous silicon
Applied sciences
Energy
Exact sciences and technology
light trapping
Natural energy
passivation
Photovoltaic conversion
silicon nitride
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220°C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows for a good ohmic contact. With this structure we achieve an independently confirmed conversion efficiency η=20·5% on a 250 μm thick silicon solar cell. Due to the fact that the maximum process temperature is 220°C, this layer system enables new solar cell concepts. Copyright © 2006 John Wiley & Sons, Ltd.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.696