Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon

Boron and oxygen contamination in Czochralski‐grown (Cz) silicon leads to a degradation of the minority charge carrier lifetime within short times due to the formation of recombination active complexes. The formation of these complexes is investigated for longer times showing a further development o...

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Bibliographic Details
Published in:Progress in photovoltaics 2008-03, Vol.16 (2), p.135-140
Main Authors: Herguth, A., Schubert, G., Kaes, M., Hahn, G.
Format: Article
Language:English
Subjects:
Applied sciences
boron-oxygen
Czochralski
defect
degradation
Energy
Exact sciences and technology
lifetime
Natural energy
Photovoltaic conversion
silicon
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:Boron and oxygen contamination in Czochralski‐grown (Cz) silicon leads to a degradation of the minority charge carrier lifetime within short times due to the formation of recombination active complexes. The formation of these complexes is investigated for longer times showing a further development of the defect. This development called ‘regeneration’ is triggered by illumination or applied forward voltages and leads to a new state of the defect. This new state of the defect is proven to be less recombination active allowing higher stable minority carrier lifetimes and conversion efficiencies of solar cells. The influences of temperature and light intensity are discussed. Copyright © 2007 John Wiley & Sons, Ltd.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.779