Existence of a distribution of hole-trap activation energies in FEP-teflon

When FEP‐Teflon samples are electron irradiated at room temperature in open circuit and stored in that state for varying times following the end of irradiation, the temperature of the first current peak of the short‐circuit TSC plot increases with increasing storage time. A new model is presented to...

Full description

Saved in:
Bibliographic Details
Published in:Journal of polymer science. Polymer physics edition 1983-09, Vol.21 (9), p.1691-1701
Main Authors: HAGEKYRIAKOU, J, FLEMING, R. J
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Physicochemistry of polymers
Polymers and radiations
Properties and characterization
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:When FEP‐Teflon samples are electron irradiated at room temperature in open circuit and stored in that state for varying times following the end of irradiation, the temperature of the first current peak of the short‐circuit TSC plot increases with increasing storage time. A new model is presented to explain this phenomenon, its main features being (i) a quasicontinuous distribution of hole‐trap activation energies, the “center of mass” of the trapped hole population moving toward the deeper end of the distribution during the storage time, and (ii) an electron/hole recombination coefficient much smaller than that implied in an earlier model. It is shown that the assumption of a single dominant type of hole trap implies an unrealistically large frequency factor.
ISSN:0098-1273
1542-9385
DOI:10.1002/pol.1983.180210909