A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In-line Implantation and PBII Treatments

Hydrogen was incorporated in silicon by plasma‐based ion implantation (PBII) with 20 kV high voltage acceleration. Samples treated by hydrogen plasma and by in‐line implantation (H 2+, 30 kV) were performed in order to evidence the specific effects promoted by the PBII. Plasma treatments did not ind...

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Bibliographic Details
Published in:Plasma processes and polymers 2007-04, Vol.4 (S1), p.S27-S32
Main Authors: Arab, Zeinab, David, Marie-Laure, Drouet, Michel, Pichon, Luc, Straboni, Alain
Format: Article
Language:English
Subjects:
amorphous
growth
hydrogen
implantation
plasma immersion
platelets
silicon
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Summary:Hydrogen was incorporated in silicon by plasma‐based ion implantation (PBII) with 20 kV high voltage acceleration. Samples treated by hydrogen plasma and by in‐line implantation (H 2+, 30 kV) were performed in order to evidence the specific effects promoted by the PBII. Plasma treatments did not induce any significant change in the silicon. With in‐line implantation, only classical defects can be observed in the silicon around the ion projected range. Post‐annealing is needed to obtain the formation of platelets. On the contrary, bubbles and platelets can be observed immediately after PBII implantation. With the highest doses, no post‐annealing is needed to form blisters and cavities, because of the heating due to the PBII treatment.
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.200730301