Cover Picture: Plasma Process. Polym. 9/2019

Front Cover: The ability to control individual step parameters in cyclic plasma etch processes provides novel capabilities for nanofabrication. In this example, the pitch of a line/space array is halved as the pattern is transferred into a tantalum nitride (TaN) film. The redeposition of a partially...

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Bibliographic Details
Published in:Plasma processes and polymers 2019-09, Vol.16 (9), p.n/a
Main Authors: Marchack, Nathan, Hernandez, Keith, Walusiak, Benjamin, Innocent‐Dolor, Jon‐l, Engelmann, Sebastian
Format: Article
Language:English
Online Access:Get full text
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Summary:Front Cover: The ability to control individual step parameters in cyclic plasma etch processes provides novel capabilities for nanofabrication. In this example, the pitch of a line/space array is halved as the pattern is transferred into a tantalum nitride (TaN) film. The redeposition of a partially oxidized surface layer creates a self‐aligned mask, and line edge roughness (LER) is maintained by the highly selective nature of the etch. Further details can be found in the article by Nathan Marchack, Keith Hernandez, Benjamin Walusiak, Jon‐l Innocent‐Dolor, Sebastian Engelmann (1900008).
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.201970019