Structural characterization of H plasma-doped ZnO single crystals by positron annihilation spectroscopies

Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H plasma. Structural characterizations have been made by various positron annihilation spectroscopies (continuous and pulsed slow positron beams, conventional lifetime). The content...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2010-11, Vol.207 (11), p.2415-2425
Main Authors: Anwand, Wolfgang, Brauer, Gerhard, Cowan, Thomas E., Grambole, Dieter, Skorupa, Wolfgang, Čížek, Jakub, Kuriplach, Jan, Procházka, Ivan, Egger, Werner, Sperr, Peter
Format: Article
Language:English
Subjects:
defects
doping
positron annihilation
vacancies
ZnO
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Summary:Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H plasma. Structural characterizations have been made by various positron annihilation spectroscopies (continuous and pulsed slow positron beams, conventional lifetime). The content of bound hydrogen (H‐b) before and after the remote H plasma treatment at the polished side of the crystals was determined at depths of 100 and 600 nm, respectively, using nuclear reaction analysis. At a depth of 100 nm, H‐b increased from (11.8 ± 2.5) to (48.7 ± 7.6) × 1019 cm−3 after remote H plasma treatment, whereas at 600 nm no change in H‐b was observed.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.200925609