Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Multi‐quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterizatio...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2010-06, Vol.207 (6), p.1383-1385
Main Authors: Polyakov, Alexander, Govorkov, Anatoliy, Smirnov, Nikolay, Markov, Alexander, Lee, In-Hwan, Ahn, Haeng-Keun, Karpov, Sergey, Pearton, Stephen
Format: Article
Language:English
Subjects:
electrical properties
GaN/InGaN
MOCVD
optical properties
quantum wells
simulation
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Summary:Multi‐quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum‐mechanical simulation of the grown heterostructures.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.200983413