(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends clearly on th...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2010-09, Vol.207 (9), p.2198-2200
Main Authors: Kolbe, Tim, Sembdner, Toni, Knauer, Arne, Kueller, Viola, Rodriguez, Hernan, Einfeldt, Sven, Vogt, Patrick, Weyers, Markus, Kneissl, Michael
Format: Article
Language:English
Subjects:
Applied sciences
electroluminescence
Electronics
Exact sciences and technology
InGaAlN
light emitting diodes
Optoelectronic devices
quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated and compared with electroluminescence (EL) measurements. The light output power depends clearly on the QW thickness. The highest output power has been found for the LEDs with a QW thickness of 2.2 nm. This effect is attributed to the trade‐off between electron and hole wave function overlap and carrier concentration in the active region which are triggered by the quantum confined Stark effect.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201026046