Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature

Here we report on a novel method, which allows rapid photoluminescence imaging of band‐to‐band and dislocation‐related radiation, D1, on multicrystalline silicon wafers at room temperature. We demonstrate spatially resolved 5.0 × 5.0 cm2 D1‐images, with a resolution of ∼120 µm, within a total record...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-04, Vol.208 (4), p.888-892
Main Authors: Schmid, R. P., Mankovics, D., Arguirov, T., Ratzke, M., Mchedlidze, T., Kittler, M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
dislocations
Exact sciences and technology
imaging
Linear defects: dislocations, disclinations
photoluminescence
Physics
silicon
Structure of solids and liquids
crystallography
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Summary:Here we report on a novel method, which allows rapid photoluminescence imaging of band‐to‐band and dislocation‐related radiation, D1, on multicrystalline silicon wafers at room temperature. We demonstrate spatially resolved 5.0 × 5.0 cm2 D1‐images, with a resolution of ∼120 µm, within a total recording time of 550 ms. The method provides homogeneous illumination over the whole sample area. Comparison with results from a conventional photoluminescence mapping technique demonstrates the potential of this new method for application as an in‐line wafer characterization technique.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201026269